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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1096 DESCRIPTION With TO-220Fa package High breakdown voltage Complement to type 2SD1587 APPLICATIONS For TV vertical output applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC PARAMETER CONDITIONS Open emitter Collector-base voltage HAN INC Collector -emitter voltage Emitter-base voltage Collector current SEM GE Open base Open collector Ta=25ae OND IC TOR UC VALUE -200 -150 -5 -2 2.0 UNIT V V V A PC Collector power dissipation TC=25ae 25 150 -55~150 ae ae W Tj Tstg Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=-30mA; IB=0 IE=-1mA; IC=0 IC=-500mA ;IB=-50mA IC=-500mA ;IB=-50mA VCB=-150V; IE=0 VEB=-5V; IC=0 IC=-0.4A ; VCE=-10V IC=-0.4A; VCE=-10V 40 5 MIN -150 -5 2SB1096 SYMBOL V(BR)CEO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT TYP. MAX UNIT V V -1.0 -1.5 -50 -50 200 |I |I V V A A hFE Classifications M 40-80 L K 100-200 IN 60-120 HAN C SEM GE OND IC TOR UC MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1096 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance: A 0.15 mm) 3 |
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